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Washington State University Institute of Materials Research
CZT detector
CZT sliced ingot
CZT detector fabrication
CZT growth

CZT Crystal Growth

“Commercialization of Rapid-Production Growth Method for Affordable Cadmium Zinc Telluride (CZT) Semiconductor”

Funding:  Department of Energy – Small Business Technology Transfer (STTR)

Partner: Radiation Detection Technologies, Inc. (RDT)

“The Rapid-Production of the High-Performance and Affordable Cadmium Telluride and Cadmium Zinc Telluride for Medical Imaging Applications”

Funding: National Institutes of Health – Small Business Technology Transfer (STTR)

Partner: Radiation Detection Technologies, Inc. (RDT)

Cadmium zinc telluride (CZT) has proven to be a valuable material for high-resolution, high detection-efficiency, room-temperature radiation detectors that can achieve a spectroscopic resolution of <1% full-width half maximum (FWHM). The high spatial and energy resolution of CZT, compared to that of scintillators, offers superior efficiency and image quality for nuclear safeguards, homeland security, nuclear medicine, and X-ray imaging applications. Recent advancements in the Accelerated Crucible Rotation Technique by Modified Vertical Bridgman (ACRT-MVB) crystal growth method, developed at the Institute for Materials Research at WSU, allows for CZT and similar materials to be grown at 10 – 20× faster growth rates than the current state-of-the-art methods, with material quality resulting in equal or better detector performance. The ACRT-MVB growth method for CZT is fast and does not require post-growth processing, two major advantages that lower the material cost.

Relevant Publications:

  • Lynn, K., K. Jones, and G. Ciampi, “Compositions of doped, co-doped and tri-doped semiconductor materials,” US, USPTO US8070987B2, (2007).
  • Jones, K.A., A. Datta, K.G. Lynn, and L.A. Franks, “Variations in μτ measurements in cadmium zinc telluride,” Journal of Applied Physics, 107(12), 123714 (2010).
  • Soundararajan, R. and K. Lynn, “Effects of excess tellurium and growth parameters on the band gap defect levels in CdxZn1−xTe,” Journal of Applied Physics, 112, 07311 (2012).
  • Datta, A., S. Swain, Y. Cui, A. Burger, and K. Lynn, “Correlations of Bridgman-Grown Cd9Zn0.1Te Properties with Different Ampoule Rotation Schemes,” Journal of Electronic Materials, 42(11), 3041-3053 (2013).
  • McCoy, J.J., S. Kakkireni, Z.H. Gilvey, S.K. Swain, A.E. Bolotnikov, and K.G. Lynn, “Overcoming Mobility Lifetime Product Limitations in Vertical Bridgman Production of Cadmium Zinc Telluride Detectors,” Journal of Electronic Materials, 48(7), 4226-4234 (2019).
  • McCoy, J.J., S. Kakkireni, G. Gélinas, J.F. Garaffa, S.K. Swain, and K.G. Lynn, “Effects of excess Te on flux inclusion formation in the growth of cadmium zinc telluride when forced melt convection is applied,” Journal of Crystal Growth, 535, 125542 (2020).