“Fundamentals of Doping and Defects in Ga2O3 for High Breakdown Field Electronics”
Funding: Department of Defense Multidisciplinary University Research Initiative (MURI)
Partners: University of Utah
Compound Semiconductor Article: Zirconium Doping Improves Gallium Oxide
IMR’s ultrawide bandgap research focuses on Gallium Oxide (Ga2O3), a promising material for high voltage breakdown devices and deep UV LEDs. Crystals of Ga2O3 are grown on-site with a Czochralski furnace at temperatures exceeding 1800C and later characterized with the purpose of studying optical, electronic, and defect properties. Measurement techniques include UV-vis-NIR, Hall Effect, XRD, DLTS, TEES and PAS. Doping of Ga2O3 crystals has been studied, with the intention of increasing material conductivity and improving crystallinity and Czochralski growth methods. Researchers at WSU work together with collaborators at The University of Utah in a tightly organized team to improve Ga2O3 device performance from a synthesis standpoint.
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